BC857BL3 Datasheet, PDF (1/5 Pages) Infineon Technologies AG – PNP Silicon AF Transistors

BC857BL3, BC858BL3
PNP Silicon AF Transistors
Preliminary data
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Complementary types: BC847BL3,
BC848BL3 (NPN)
3
1
2
Type
BC857BL3
BC858BL3
Marking
3F
3K
Pin Configuration
1=B
2=E
3=C
1=B
2=E
3=C
Package
TSLP-3-1
TSLP-3-1
Maximum Ratings
Parameter
Collector-emitter voltage
BC857BL3
BC858BL3
Symbol
V_CEO
Value
45
30
Unit
V
Collector-emitter voltage
BC857BL3
BC858BL3
V_CES
50
30
Collector-base voltage
BC857BL3
BC858BL3
V_CBO
50
30
Emitter-base voltage
BC857BL3
V_EBO
BC858BL3
Collector current
Peak collector current
Total power dissipation
T_S ≤ 138°C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point¹⁾
I_C
I_CM
P_tot
T_j
T_stg
Symbol
R_thJS
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}
5
5
100
200
250
150
-65 ... 150
Value
≤ 50
mA
mW
°C
Unit
K/W
1
Jan-30-2004