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BC817UPN Datasheet, PDF (2/4 Pages) Infineon Technologies AG – NPN/PNP Silicon Transistor Array
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BC817UPN
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 25 V, IE = 0
Collector cutoff current
VCB = 25 V, IE = 0 , TA = 150 °C
Emitter cutoff current
VEB = 4 V, IC = 0
V(BR)CEO 45
V(BR)CBO 50
V(BR)EBO 5
ICBO
-
ICBO
-
IEBO
-
-
-
-
-
-
-
-
100
-
50
-
100
DC current gain 1)
IC = 100 mA, VCE = 1 V
IC = 300 mA, VCE = 1 V
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
Base-emitter saturation voltage 1)
IC = 500 mA, IB = 50 mA
AC Characteristics
hFE
160 250 400
100
-
-
VCEsat
-
-
0.7
VBEsat
-
-
1.2
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
fT
-
170
-
Ccb
-
6
-
Ceb
-
60
-
Unit
V
nA
µA
nA
-
V
MHz
pF
1) Pulse test: t < 300s; D < 2%
2
Aug-21-2002
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