BC817UPN Datasheet, PDF (1/4 Pages) Infineon Technologies AG – NPN/PNP Silicon Transistor Array

BC817UPN
NPN/PNP Silicon Transistor Array

For AF input stages and driver applications

High current gain

Low collector-emitter saturation voltage

Two (galvanic) internal isolated NPN/PNP
Transistors in one package
Tape loading orientation
4
5
6
3
2
1
VPW09197
Top View
654
W1s
123
Direction of Unreeling
Type
BC817UPN
Marking on SC74 package
(for example W1s)
corresponds to pin 1 of device
C1
B2
E2
6
5
4
TR2
TR1
Position in tape: pin 1
opposite of feed hole side
SC74_Tape
1
2
3
E1
B1
C2
EHA07177
Marking
1Bs
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 _SC74
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, T_S = 115 °C
Junction temperature
Storage temperature
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_CM
I_B
I_BM
P_tot
T_j
T_stg
Value
45
50
5
500
1
100
200
330
150
-65 ... 150
Unit
V
mA
A
mA
mW
°C
Thermal Resistance
Junction - soldering point¹⁾
R_thJS
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}

105
K/W
1
Aug-21-2002