BB639C_07 Datasheet, PDF (2/8 Pages) Infineon Technologies AG – Silicon Variable Capacitance Diode

BB639C/BB659C...
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current
V_R = 30 V
V_R = 30 V, T_A = 85 °C
I_R
nA
-
-
10
-
- 200
AC Characteristics
Diode capacitance
V_R = 1 V, f = 1 MHz
V_R = 2 V, f = 1 MHz
V_R = 25 V, f = 1 MHz
V_R = 28 V, f = 1 MHz
C_T
pF
36.5 39 42
27 30.2 33.2
2.5 2.72 3.05
2.4 2.55 2.75
Capacitance ratio
V_R = 1 V, V_R = 28 V, f = 1 MHz
Capacitance ratio
V_R = 2 V, V_R = 25 V, f = 1 MHz
Capacitance matching¹⁾
V_R = 1V to 28V, f = 1 MHz, 7 diodes sequence,
BB639C
C_T1/C_T28
C_T2/C_T25
∆C_T/C_T
14.2 15.3 -
9.5 11.1 -
%
-
-
2.5
V_R = 1V to 28V , f = 1 MHz, 4 diodes sequence,
BB659C/-02V
-
0.3
1
V_R = 1V to 28V, f = 1 MHz, 7 diodes sequence ,
BB659C/-02V
-
0.5
2
Series resistance
r_S
V_R = 5 V, f = 470 MHz
1_{For details please refer to Application Note 047}
-
0.6 0.7 Ω
2
2007-04-20