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BB639C_07 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – Silicon Variable Capacitance Diode
Silicon Variable Capacitance Diode
• For tuning of extended frequency band
in VHF TV / VTR tuners
• High capacitance ratio
• Low series inductance
• Low series resistance
• Excellent uniformity and matching due to
"in-line" matching assembly procedure
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
BB639C/BB659C...
BB639C
BB659C/-02V

Type
BB639C
BB659C
BB659C-02V
Package
SOD323
SCD80
SC79
Configuration
single
single
single
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
Peak reverse voltage
( R ≥ 5kΩ )
VR
VRM
Forward current
IF
Operating temperature range
Top
Storage temperature
Tstg
1Pb-containing package may be available upon special request
LS(nH)
1.8
0.6
0.6
Marking
yellow S
HH
H
Value
Unit
30
V
35
20
mA
-55 ... 150
°C
-55 ... 150
1
2007-04-20