BAR81_07 Datasheet, PDF (2/6 Pages) Infineon Technologies AG – Silicon RF Switching Diode

BAR81...
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current
V_R = 20 V
Forward voltage
I_F = 100 mA
I_R
-
-
20 nA
V_F
- 0.93 1 V
AC Characteristics
Diode capacitance
C_T
V_R = 1 V, f = 1 MHz
V_R = 3 V, f = 1 MHz
Forward resistance
r_f
I_F = 5 mA, f = 100 MHz
Charge carrier life time
τ _rr
I_F = 10 mA, I_R = 6 mA, measured at I_R = 3 mA,
R_L = 100 Ω
I-region width
W_I
Shunt Insertion loss¹⁾
I_L
I_F = 10 mA, f = 1.89 GHz
Shunt isolation¹⁾
I_SO
V_R = 3 V, f = 1.89 GHz
pF
-
0.6 1
- 0.57 0.9
-
0.7
1Ω
-
80
- ns
-
3.5
- µm
-
30
- dB
-
0.7
-
Configuration of the shunt-diode
- A perfect ground is essential for optimum isolation
- The anode pins should be used as passage for RF
1_{For more information please refer to Application Note 049.}
2
2007-04-19