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BAR81_07 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – Silicon RF Switching Diode | |||
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Silicon RF Switching Diode
⢠Designed for use in shunt configuration in
high performance RF switches
⢠High shunt signal isolation
⢠Low shunt insertion loss
⢠Optimized for short - open transformation
using λ/4 lines
⢠Pb-free (RoHS compliant) package1)
⢠Qualified according AEC Q101
BAR81...
BAR81W
"
!
Type
BAR81W
Package
SOT343
* series inductance chip to ground
Configuration
single shunt-diode
LS(nH) Marking
0.15* BBs
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
VR
Forward current
IF
Total power dissipation
Ptot
Ts ⤠138°C
Junction temperature
Tj
Operating temperature range
Top
Storage temperature
Tstg
Value
30
100
100
150
-55 ... 125
-55 ... 150
Thermal Resistance
Parameter
Symbol
Junction - soldering point2)
RthJS
1Pb-containing package may be available upon special request
2For calculation of RthJA please refer to Application Note Thermal Resistance
Value
⤠120
Unit
V
mA
mW
°C
Unit
K/W
1
2007-04-19
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