AUIRF7379Q Datasheet, PDF(2/11 Page) International Rectifier – Advanced Planar Technology Low On-Resistance

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AUIRF7379Q Datasheet, PDF (2/11 Pages) International Rectifier – Advanced Planar Technology Low On-Resistance

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AUIRF7379Q

Static @ TJ = 25Â°C (unless otherwise specified)

Parameter

V(BR)DSS

Drain-to-Source Breakdown Voltage

ïV(BR)DSS/ïTJ Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

VGS(th)

gfs

Gate Threshold Voltage

Forward Trans conductance

IDSS

Drain-to-Source Leakage Current

IGSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-Ch

P-Ch

N-P

Min.

-30

âââ

1.0

-1.0

5.2

2.5

âââ

Typ.

âââ

0.032

-0.037

0.038

0.055

0.070

0.130

âââ

Dynamic Electrical Characteristics @ TJ = 25Â°C (unless otherwise specified)

Total Gate Charge

N-Ch âââ âââ

P-Ch âââ âââ

Qgs

Gate-to-Source Charge

N-Ch âââ âââ

P-Ch âââ âââ

Qgd

Gate-to-Drain Charge

N-Ch âââ âââ

P-Ch âââ

td(on)

Turn-On Delay Time

N-Ch âââ 6.8

P-Ch âââ 11

Rise Time

N-Ch âââ 21

P-Ch âââ 17

td(off)

Turn-Off Delay Time

N-Ch âââ 22

P-Ch âââ 25

Fall Time

N-Ch âââ 7.7

P-Ch âââ 18

Internal Drain Inductance

Internal Source Inductance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

N-P âââ 4.0

N-P âââ 6.0

N-Ch âââ 520

P-Ch âââ 440

N-Ch âââ 180

P-Ch âââ 200

N-Ch âââ 72

P-Ch âââ 93

Diode Characteristics

Parameter

Min. Typ.

Continuous Source Current (Body Diode)

N-Ch âââ âââ

P-Ch âââ âââ

ISM

Pulsed Source Current

(Body Diode)ï ïï

N-Ch âââ âââ

P-Ch âââ âââ

VSD

Diode Forward Voltage

N-Ch âââ âââ

P-Ch âââ âââ

trr

Reverse Recovery Time

N-Ch âââ 47

P-Ch âââ 53

Qrr

Reverse Recovery Charge

N-Ch âââ 56

P-Ch

Max.

âââ

0.045

0.075

0.090

0.180

3.0

-3.0

âââ

1.0

-1.0

-25

Â± 100

2.9

7.9

9.0

âââ

Max.

3.1

-3.1

-34

1.0

-1.0

Units

Conditions

VGS = 0V, ID = 250ÂµA

VGS = 0V, ID = -250ÂµA

V/Â°C

Reference to 25Â°C, ID = 1mA

Reference to 25Â°C, ID = -1mA

VGS = 10V, ID = 5.8A ï

ïï ï ï

VGS = 4.5V, ID = 4.9A ï

VGS = -10V, ID = -4.3A ï

VGS = -4.5V, ID = -3.7A ï

VDS = VGS, ID = 250ÂµA

VDS = VGS, ID = -250ÂµA

VDS = 15V, ID = 2.4Aï

VDS = -24V, ID = -1.8Aï

VDS =24V, VGS = 0V

ÂµA

VDS = -24V,VGS = 0V

VDS =24V, VGS = 0V ,TJ = 125Â°C

VDS = -24V,VGS = 0V,TJ = 125Â°C

VGS = Â± 20V

N-Channel

ID = 2.4A, VDS = 24V,VGS = 10V

ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï

P-Channel

ID = -1.8A,VDS = -24V,VGS = -10V

N-Channel

VDD = 15V,ID = 2.4A,RG = 6.0ïï¬ï

RD = 6.2ïï

ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï

ns P-Channel

VDD = -15V,ID = -1.8A,RG = 6.0ïï¬ï

RD = 8.2ïï

Between lead,6mm (0.25in.)from

Package and center of die contact

N-Channel

VGS = 0V,VDS = 25V,Æ = 1.0MHz

ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï

P-Channel

VGS = 0V,VDS = -25V,Æ = 1.0MHz

Units

Conditions

TJ = 25Â°C,IS = 1.8A,VGS = 0V ïï

TJ = 25Â°C,IS = -1.8A,VGS = 0V ïï

N-Channel

TJ = 25Â°C ,IF = 2.4A, di/dt = 100A/Âµs

P-Channel

TJ = 25Â°C,IF = -1.8A, di/dt = 100A/Âµs

Notes:ï

ï Repetitive rating; pulse width limited by max. junction temperature.

ïï N-Channel ISD ï£ï 2.4A, di/dt ï£ï 73A/Âµs, VDD ï£ï V(BR)DSS, TJ ï£ 150Â°C.

P-Channel ISD ï£ï -1.8A, di/dt ï£ï 90A/Âµs, VDD ï£ï V(BR)DSS, TJ ï£ 150Â°C.

ï Pulse width ï£ï 300Âµs; duty cycle ï£ 2%.

ï Surface mounted on FR-4 board , t ï£ï ï 10sec.

2015-9-30

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