AUIRF7379Q Datasheet, PDF (1/11 Pages) International Rectifier – Advanced Planar Technology Low On-Resistance

AUTOMOTIVE GRADE
AUIRF7379Q
Features
 Advanced Planar Technology
 Low On-Resistance
 Logic Level Gate Drive
 Dual N and P Channel MOSFET
 Surface Mount
 Available in Tape & Reel
 150°C Operating Temperature
 Lead-Free, RoHS Compliant
 Automotive Qualified *
N-CHANNEL MOSFET
N-CH P-CH
S1
1
G1
2
8
D1
7
D1
V_DSS
30V -30V
S2
3
6 _D2 ^RDS(on) ^{typ. 0.038 0.070ï€} 
G2
4
5
D2
max. 0.045 0.090
P-CHANNEL MOSFET
I_D
5.8A -4.3A
Top View
Description
Specifically designed for Automotive applications, these HEXFET®
Power MOSFET's in a Dual SO-8 package utilize the lastest processing
techniques to achieve extremely low on-resistance per silicon area.
Additional features of these Automotive qualified HEXFET Power
MOSFET's are a 150°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating. These
benefits combine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety of other
applications.
The efficient SO-8 package provides enhanced thermal characteristics
and dual MOSFET die capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
SO-8
AUIRF7379Q
G
Gate
D
Drain
S
Source
Base part number
AUIRF7379Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7379QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
V_DS
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
V_GS
dv/dt
T_J
T_STG
Parameter
Drain-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt 
Operating Junction and
Storage Temperature Range
Max.
N-Channel
P-Channel
30
-30
5.8
-4.3
4.6
-3.4
46
-34
2.5
0.02
± 20
5.0
-5.0
-55 to + 150
Units
V
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
Parameter
R_JA
Junction-to-Ambient ( PCB Mount, steady state) 
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
–––
Max.
50
Units
°C/W
2015-9-30