AUIRF7304Q Datasheet, PDF(2/9 Page) International Rectifier – Advanced Planar Technology Low On-Resistance

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AUIRF7304Q Datasheet, PDF (2/9 Pages) International Rectifier – Advanced Planar Technology Low On-Resistance

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AUIRF7304Q

Static @ TJ = 25Â°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V(BR)DSS

ïV(BR)DSS/ïTJ

RDS(on)

VGS(th)

gfs

IDSS

IGSS

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Trans conductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

-20 âââ âââ V VGS = 0V, ID = -250ÂµA

âââ -0.012 âââ V/Â°C Reference to 25Â°C, ID = -1mA

âââ

âââ 0.090

âââ 0.140

ïï ï ï

VGS

= -4.5V, ID

= -2.7V, ID

= -2.2A

= -1.8A

-0.70 âââ -1.5 V VDS = VGS, ID = -250ÂµA

4.0 âââ âââ S VDS = -16V, ID = -2.2A

âââ

-1.0

-25

ÂµA

VDS = - 16V, VGS = 0V

VDS = -16V,VGS = 0V,TJ =125Â°C

âââ

âââ -100

âââ 100

VGS = -12V

VGS = 12V

Dynamic Electrical Characteristics @ TJ = 25Â°C (unless otherwise specified)

Total Gate Charge

Qgs

Gate-to-Source Charge

Qgd

Gate-to-Drain Charge

td(on)

Turn-On Delay Time

Rise Time

td(off)

Turn-Off Delay Time

Fall Time

Internal Drain Inductance

Internal Source Inductance

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

Diode Characteristics

âââ âââ 22

ID = -2.2A

âââ âââ 3.3 nC VDS = -16V

âââ âââ 9.0

VGS = -4.5V, See Fig.6 & 12 ï

âââ 8.4 âââ

VDD = -10V

âââ

ID = -2.2A

RG = 6.0ïï

âââ 33 âââ

RD = 4.5ïï ï¬ï See Fig.10 ï

âââ

4.0

6.0

âââ

Between lead,

6mm (0.25in.)

from package

and center of die contact

âââ 610 âââ

VGS = 0V

âââ 310 âââ pF VDS = -15V

âââ 170 âââ

Æ = 1.0MHz, See Fig.5

Parameter

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode)ï ïï

Min.

âââ

Typ.

âââ

Max. Units

Conditions

-2.5

-17

MOSFET symbol

showing the

integral reverse

p-n junction diode.

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ton

Forward Turn-On Time

âââ âââ -1.0 V TJ = 25Â°C,IS = -1.8A,VGS = 0V ïï

âââ 56 84 ns TJ = 25Â°C ,IF = -2.2A,

âââ 71 110 nC di/dt = 100A/Âµs ïï ï

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:ï

ï Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11)

ïï ISD ï£ï -2.2A, di/dt ï£ï 50A/Âµs, VDD ï£ï V(BR)DSS, TJ ï£ 150Â°C.

ï Pulse width ï£ï 300Âµs; duty cycle ï£ 2%.

ï When mounted on 1 inch square copper board , t ï£ï ï ï±ï°sec.

2015-11-16

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