AUIRF7304Q Datasheet, PDF (1/9 Pages) International Rectifier – Advanced Planar Technology Low On-Resistance

Features
 Advanced Planar Technology
 Low On-Resistance
 Dual P Channel MOSFET
 Dynamic dv/dt Rating
 Logic Level
 150°C Operating Temperature
 Fast Switching
 Lead-Free, RoHS Compliant
 Automotive Qualified *
AUTOMOTIVE GRADE
AUIRF7304Q
S1
1
G1
2
S2
3
G2
4
8
D1
7
D1
6
D2
5
D2
Top View
HEXFET^® Power MOSFET
V_DSS
-20V
R_DS(on) max.
I_D
0.090
-4.3A
Description
Specifically designed for Automotive applications, this
cellular design of HEXFET® Power MOSFETs utilizes the
latest processing techniques to achieve low on-resistance
per silicon area. This benefit combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in Automotive and a wide variety of other
applications.
SO-8
AUIRF7304Q
G
Gate
D
Drain
S
Source
Base part number
AUIRF7304Q
Package Type
SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF7304QTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I_D @ T_A = 25°C
I_D @ T_A = 25°C
I_D @ T_A = 70°C
I_DM
P_D @T_A = 25°C
V_GS
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Continuous Drain Current, V_GS @ -4.5V
Pulsed Drain Current 
Maximum Power Dissipation 
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt 
Operating Junction and
Storage Temperature Range
Max.
-4.7
-4.3
-3.4
-17
2.0
0.016
± 12
-5.0
-55 to + 150
Units
A
W
W°/C
V
V/ns
°C
Thermal Resistance
Symbol
Parameter
R_JA
Junction-to-Ambient 
Typ.
–––
Max.
62.5
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-11-16