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| AUIRF6215S Datasheet, PDF (2/10 Pages) International Rectifier – Advanced Planar Technology Low On-Resistance | |||
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AUIRF6215S
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
ïV(BR)DSS/ïTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Trans conductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-150 âââ
âââ -0.20
âââ âââ
âââ âââ
-2.0 âââ
3.6 âââ
âââ âââ
âââ âââ
âââ âââ
âââ âââ
âââ
âââ
0.29
0.58
-4.0
âââ
-25
-250
-100
100
V VGS = 0V, ID = -250µA
V/°C Reference to 25°C, ID = -1mA
ïï ï ï
VGS =
VGS =
-10V, ID
-10V, ID
=
=
-6.6A ïï
-6.6A,TJ =150°C ïï
V VDS = VGS, ID = -250µA
S VDS = -25V, ID = -6.6A
µA
VDS = -150V, VGS = 0V
VDS = -120V,VGS = 0V,TJ =150°C
nA
VGS = -20V
VGS = 20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
LS
Internal Source Inductance
âââ âââ 66
âââ âââ 8.1
âââ âââ 35
âââ 14 âââ
âââ 36 âââ
âââ 53 âââ
âââ 37 âââ
âââ 7.5 âââ
ID = -6.6A
nC VDS = -120V
VGS = -10Vï
VDD = -75V
ns
ID = -6.6A
RG= 6.8ïï¬ï ï
RD= 12ïï ï
Between lead,6mm (0.25in.)
nH from package and center
of die contact
Ciss
Input Capacitance
Coss
Output Capacitance
âââ 860 âââ
VGS = 0V
âââ 220 âââ pF VDS = -25V
Crss
Reverse Transfer Capacitance
âââ 130 âââ
Æ = 1.0MHz, See Fig.5
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)ï ïï
âââ âââ -11
âââ âââ -44
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
âââ âââ -1.6
âââ 160 240
âââ 1.2 1.7
V TJ = 25°C,IS = -6.6A,VGS = 0V ïï
ns TJ = 25°C ,IF = -6.6A
µC di/dt = 100A/µs ïï ï
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:ï
ï Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)
ï Limited by TJmax, starting TJ = 25°C, L = 14mH, RG = 25ï, IAS = -6.6A. (See fig.12)
ï ISD ï£ï -6.6A, di/dt ï£ï 620A/µs, VDD ï£ï V(BR)DSS, TJ ï£ 175°C.
ï Pulse width ï£ï 300µs; duty cycle ï£ 2%.
ï
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application
note #AN-994
ïï Rï± is measured at TJ of approximately 90°C
2
2015-11-13
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