AUIRF6215S Datasheet, PDF (1/10 Pages) International Rectifier – Advanced Planar Technology Low On-Resistance

AUTOMOTIVE GRADE
AUIRF6215S
Features
 Advanced Planar Technology
 Low On-Resistance
 P-Channel MOSFET
 Dynamic dv/dt Rating
 175°C Operating Temperature
 Fast Switching
 Fully Avalanche Rated
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
Description
Specifically designed for Automotive applications, this cellular design of
HEXFET® Power MOSFETs utilizes the latest processing techniques to
achieve low on-resistance per silicon area. This benefit combined with the
fast switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and a wide variety of other
applications.
V_DSS
HEXFET^® Power MOSFET
-150V
R_DS(on) max.
0.29
I_D
-13A
D
G
Gate
S
G
D²Pak
AUIRF6215S
D
Drain
S
Source
Base part number
AUIRF6215S
Package Type
D²-Pak
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRF6215S
AUIRF6215STRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_A = 25°C
P_D @T_C = 25°C
V_GS
E_AS
I_AR
E_AR
dv/dt
T_J
T_STG
Parameter
Continuous Drain Current, V_GS @ -10V
Continuous Drain Current, V_GS @ -10V
Pulsed Drain Current 
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery 
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Symbol
Parameter
R_JC
Junction-to-Case
R_JA
Junction-to-Ambient ( PCB Mount, steady state) 
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
Max.
-13
-9.0
-44
3.8
110
0.71
± 20
310
-6.6
11
-5.0
-55 to + 175
300
Typ.
–––
Max.
1.4
40
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
2015-11-13