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| AUIRF540Z Datasheet, PDF (2/12 Pages) International Rectifier – HEXFET® Power MOSFET | |||
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AUIRF540Z/S
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
ïV(BR)DSS/ïTJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
100 âââ âââ V VGS = 0V, ID = 250µA
âââ 0.093 âââ V/°C Reference to 25°C, ID = 1mA
âââ 21 26.5 mïï ï VGS = 10V, ID = 22A ïï
2.0 âââ 4.0 V VDS = VGS, ID = 250µA
36 âââ âââ S VDS = 25V, ID = 22A
âââ
âââ
âââ
âââ
20
250
µA
VDS =100V, VGS = 0V
VDS = 100V,VGS = 0V,TJ =125°C
âââ
âââ
âââ 200
âââ -200
nA
VGS = 20V
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Coss
Output Capacitance
Coss eff.
Effective Output Capacitance
Diode Characteristics
âââ 42 63
âââ 9.7 âââ
âââ 15 âââ
âââ 15 âââ
âââ 51 âââ
âââ 43 âââ
âââ 39 âââ
âââ 4.5 âââ
âââ 7.5 âââ
âââ 1770 âââ
âââ 180 âââ
âââ 100 âââ
âââ 730 âââ
âââ 110 âââ
âââ 170 âââ
ID = 22A
nC VDS = 80V
VGS = 10Vï
VDD = 50V
ns
ID = 22A
RG= 12ïï
VGS = 10V ï
Between lead,
nH
6mm (0.25in.)
from package
and center of die contact
VGS = 0V
VDS = 25V
pF
Æ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V Æ = 1.0MHz
VGS = 0V, VDS = 80V Æ = 1.0MHz
VGS = 0V, VDS = 0V to 80V ï
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)ï ïï
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
âââ âââ 36
âââ âââ 140
MOSFET symbol
A
showing the
integral reverse
p-n junction diode.
âââ âââ 1.3
âââ 33 50
âââ 41 62
V TJ = 25°C,IS = 22A,VGS = 0V ïï
ns TJ = 25°C ,IF = 22A, VDD = 50V
nC di/dt = 100A/µs ïï ï
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:ï
ï Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
ï Limited by TJmax , starting TJ = 25°C, L = 0.46mH, RG = 25ï, IAS = 20A, VGS =10V. Part not recommended for use above this value.
ï Pulse width ï£ï 1.0ms; duty cycle ï£ 2%.
ï Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
ï
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
ï This value determined from sample failure population, TJ = 25°C, L = 0.46mH, RG = 25ï, IAS = 20A, VGS =10V.
ï This is only applied to TO-220AB package.
ï This is applied to D2Pak When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and
soldering techniques refer to application note #AN-994
2
2015-9-30
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