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| AUIRF540Z Datasheet, PDF (1/12 Pages) International Rectifier – HEXFET® Power MOSFET | |||
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AUTOMOTIVE GRADE
AUIRF540Z
AUIRF540ZS
Features
ï· Advanced Process Technology
ï· Ultra Low On-Resistance
ï· 175°C Operating Temperature
ï· Fast Switching
ï· Repetitive Avalanche Allowed up to Tjmax
ï· Lead-Free, RoHS Compliant
ï· Automotive Qualified *
Description
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per silicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These features combine to make
this design an extremely efficient and reliable device for use in
Automotive applications and wide variety of other applications.
VDSS
RDS(on) typ.
max.
ID
100V
21mïï
26.5mïï
36A
D
GDS
TO-220AB
AUIRF540Z
S
G
D2Pak
AUIRF540ZS
G
Gate
D
Drain
S
Source
Base part number
AUIRF540Z
AUIRF540ZS
Package Type
TO-220
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRF540Z
AUIRF540ZS
AUIRF540ZSTRL
Absolute Maximum Ratings
Stresses beyond those listed under âAbsolute Maximum Ratingsâ may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (tested)
IAR
EAR
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current ï
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) ï
Single Pulse Avalanche Energy Tested Value ï
Avalanche Current ï
Repetitive Avalanche Energy ï
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screwï
Max.
36
25
140
92
0.61
± 20
83
120
See Fig.15,16, 12a, 12b
-55 to + 175
300
10 lbfâ¢in (1.1Nâ¢m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Symbol
Parameter
Rï±JC
Rï±CS
Rï±JA
Rï±JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface ï
Junction-to-Ambient ï
Junction-to-Ambient ( PCB Mount, steady state) ï
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
Typ.
âââ
0.50
âââ
Max.
1.64
âââ
62
40
Units
°C/W
2015-9-30
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