HYS64D64020GDL Datasheet, PDF (17/27 Pages) Infineon Technologies AG – 200-Pin Small Outline Dual-In-Line Memory Modules

HYS64D64020[H/G]DL–[5/6]–B
Small Outline DDR SDRAM Modules
Electrical Characteristics
Table 9 I_DD Specification for HYS64D64020[H/G]DL–[5/6]–B
Product Type
Unit
Note ¹⁾²⁾
Organization
512MB
512MB
×64
×64
2 Ranks
2 Ranks
–5
–6
Symbol
I_DD0
I_DD1
I_DD2P
I_DD2N
I_DD2Q
I_DD3P
I_DD3N
I_DD4R
I_DD4W
I_DD5
I_DD6
I_DD7
Typ.
Max.
Typ.
Max.
570
680
510
620
mA
3)
630
760
570
680
mA
3)4)
20
40
20
30
mA
5)
240
288
200
240
mA
5)
150
208
140
192
mA
5)
100
128
90
120
mA
5)
340
400
300
352
mA
5)
650
780
570
676
mA
3)4)
670
800
590
696
mA
3)
1130
1360
1010
1196
mA
3)
13.6
13.6
13.6
13.6
mA
5)
1410
1660
1250
1480
mA
3)4)
1) Module I_DD values are calculated on the basis of component I_DD and can be measured differently according to DQ loading
capacity.
2) Test condition for maximum values: V_DD = 2.7 V, T_A = 10 °C
3) The module I_DDx values are calculated from the I_DDx values of the component data sheet as follows:
m × I_DDx[component] + n × I_DD3N[component] with m and n number of components of rank 1 and 2; n=0 for 1 rank
modules
4) DQ I/O (I_DDQ) currents are not included in the calculations (see note 1)
5) The module I_DDx values are calculated from the corrponent I_DDx data sheet values as: (m + n) × I_DDx[component]
Data Sheet
17
Rev. 1.0, 2004-05