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TLE7184F Datasheet, PDF (14/35 Pages) Infineon Technologies AG – System IC for B6 motor drives
TLE7184F
MOSFET Driver
Electrical Characteristics MOSFET Drivers
VS = 7.0 to 33 V, Tj = -40 °C to +150 °C all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter
Symbol
Limit Values
Unit Conditions
Min. Typ. Max.
5.4.11 High level output voltage GLx vs. VGxx4
6.7
–
–
GND
5.4.12 Rise time
5.4.13 Fall time
trise
–
200 –
tfall
–
200 –
V
VVS=8V,
Cload=20nF,
dc=94%;
fPWM=20kHz;
ns
CLoad=11nF;
ns
RLoad=1Ω
VVS=7V
20-80%
5.4.14 High level output voltage (in
passive clamping)
VGUV
–
–
1.2
V
sleep mode or
VS_UVLO1) 4)
5.4.15 Pull-down resistor at BHx to GND RBHUV –
–
80
kΩ
5.4.16 Pull-down resistor at VREG to GND RVRUV –
–
30
kΩ
5.4.17 Bias current into BHx
IBH
–
–
150
µA
VBHx-VSHx=5...13V;
no switching
5.4.18 Current between BHx and SHx
IBSH
15
35
60
µA
VBHx-VSHx=5...13V
5.4.19 Resistor between SHx and GND RSHGN 48
80
112 kΩ
5.4.20 Bias current out of SL
ISL
–
–
2
mA 0V<=VSH<=VS+1
V; no switching;
VCBS>5V
5.4.21 Input propagation time (low on) tP(ILN)
0
–
200 ns
C=11nF; RLoad=1Ω
5.4.22 Input propagation time (low off) tP(ILF)
0
–
200 ns
5.4.23 Input propagation time (high on) tP(IHN)
0
–
200 ns
5.4.24 Input propagation time (high off) tP(IHF)
0
–
200 ns
5.4.25 Absolute input propagation time tP(diff)
–
–
100 ns
difference between above
propagation times
VREG
5.4.26 VREG output voltage
5.4.27 VREG over current limitation
5.4.28 Voltage drop between Vs and
VREG
VVREG
11
IVREGOCL 100
VVsVREG –
12.5 14
–
500
–
0.5
V
VVS >= 13,5V;
Iload=37,5mA
mA no activation of
error; VVREG>VVRSD
V
VVS>= 7V;
Iload=37,5mA;
Ron operation
1) Not subject to production test; specified by design
2) Values above 33V not subjected to production test; specified by design
3) Vdiode is the bulk diode of the external low side MOSFET
4) see Chapter 9.2.15
Data Sheet
14
Rev. 1.0, 2008-12-04