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TLE4955C Datasheet, PDF (14/21 Pages) Infineon Technologies AG – Differential Hall Effect Transmission Speed Sensors
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TLE4955C
Electromagnetic Compatibility
8
Electromagnetic Compatibility
Electromagnetic Compatibility (values depends on RM!). See Figure 9
Note:
Characterization of Electro Magnetic Compatibility is carried out on samples based on one
qualification lot. Not all specification parameters have been monitored during EMC exposure. Only
key parameters e.g. switching current have been monitored.
Table 6 Conducted Pulses
REF. ISO 7637-2; 2004; ΔBspeed = 2 mT (amplitude of sinus signal); VDD = 13.5V; fB = 100 Hz; Tj = 25 °C; RM = 75 Ω
Parameter
Symbol
Level/Type
Status
Testpulse 1
Testpulse 2a1)
VEMC
IV / -100 V
C
IV / 75 V
A2)
Testpulse 2b
- / 10 V
C3)
Testpulse 3a
IV / -150 V
A
Testpulse 3b
IV / 100 V
A
Testpulse 44)
IV / -7 V
C
Testpulse 5a
IV / 86.5 V
C
Testpulse 5b
Us*=28.5 V5)
C
1) ISO 7637-2 describes internal resistance = 2 Ω (former 10 Ω)
2) Node A does not exceed 27 V clamping voltage of D2 in any case; Design target!
3) Ri=0.01 Ω
4) Testpulse4 tested for VDD=12 V
5) A central load dump protection of 42 V is used. Us*=42 V-13.5 V
Table 7 Coupled Pulses
REF. ISO 7637-3; 1995; ΔBspeed=2 mT (amplitude of sinus signal);
VDD=13.5 V; fB=100 Hz; Tj=25 °C; RM=75 Ω
Parameter
Symbol
Level/Typ
Testpulse 3a
IV / -60 V
Testpulse 3b
IV / 40 V
Status
A
A
Table 8 TEM-cell measurement
REF. ISO 11452-3, 2nd edition 2001-03-01; measured in TEM-cell; ΔBspeed = 2 mT (amplitude of sinus signal)
VDD = 13.5 V; fB=100 Hz; T = 25 °C; RM=75 Ω
Parameter
Symbol
Level/Typ
Status
ETemCell
IV / 250 V/m
CW; AM=80%, f=1
kHz
Data Sheet
14
Version 1.0
2016-06-15