English
Language : 

BTM7810K Datasheet, PDF (14/18 Pages) Infineon Technologies AG – TrilithIC
BTM7810K
Electrical Characteristics
ISH1 = ISH2 = ISL1 = ISL2 = 0 A; – 40 °C < Tj < 110 °C; 8 V < VS < 18 V (unless otherwise specified)
Pos. Parameter
Symbol Limit Values
Unit Test Condition
min. typ. max.
5.4.37 Input to drain charge;
5.4.38 Input charge total;
QID
–
QI
–
5.4.39 Input plateau voltage;
V(plateau)
–
Control Inputs of high-side switches IH 1, 2
12
–
30
60
2.6 –
nC ISL = 3 A;
VDSL=12 V
nC ISL = 3 A;
VDSL=12 V
VIL = 0 to 5 V
V ISL = 3 A;
VDSL=12 V
5.4.40 H-input voltage
5.4.41 L-input voltage
5.4.42 Input voltage hysteresis
5.4.43 H-input current
5.4.44 L-input current
5.4.45 Input series resistance
5.4.46 Zener limit voltage
Control Inputs IL1, 2
VIH High
VIH Low
VIH HY
IIH High
IIH Low
RI
VIH Z
–
–
3.0 V –
1
–
–
V–
–
0.5 –
V–
5
30
65
μA VIH = 5 V
5
14
25
μA VIH = 0.4 V
2.7 4
6
kΩ –
5.4 –
–
V IIH = 1.6 mA
5.4.47 Gate-threshold-voltage
VIL th
0.8 1.7 3.0 V IDL = 1 mA
1) When Vs>18V the peak short circuit current is significantly lower.
2) Not subject to production test; specified by design
Note: The listed characteristics are ensured over the operating range of the integrated circuit. Typical
characteristics specified mean values expected over the production spread. If not otherwise specified,
typical characteristics apply at TA = 25 °C and the given supply voltage.
Data Sheet
14
Rev. 1.0, 2008-05-15