BTM7810K Datasheet, PDF (12/18 Pages) Infineon Technologies AG – TrilithIC

BTM7810K
5.4
Electrical Characteristics
Electrical Characteristics
I_SH1 = I_SH2 = I_SL1 = I_SL2 = 0 A; – 40 °C < T_j < 110 °C; 8 V < V_S < 18 V (unless otherwise specified)
Pos. Parameter
Symbol Limit Values
Unit Test Condition
min. typ. max.
Current Consumption HS-switch
5.4.1 Quiescent current
I_S
–
4
9
μA IH1 = IH2 = 0 V
T_j = 25 °C
–
–
15
μA IH1 = IH2 = 0 V
5.4.2
5.4.3
5.4.4
Supply current;
one HS-switch active
Supply current;
both HS-switches active
Leakage current of
high-side switch
I_S
–
I_S
–
I_{SH LK}
–
5.4.5
Leakage current through logic GND
in free wheeling condition
Current Consumption LS-switch
I_{LKCL =} I_{FH +} –
I_SH
2.5 4.5 mA IH1 or IH2 = 5 V
V_S = 12 V
5
9
mA IH1 and IH2 = 5 V
V_S = 12 V
–
7
μA V_IH = V_SH = 0 V
V_S = 12 V
T_j = 85 °C
2.2 10
mA I_FH = 5 A
V_S = 12 V
5.4.6 Input current
I_IL
–
10
100 nA V_IL = 20 V;
V_DSL = 0V
5.4.7 Leakage current of low-side switch I_{DL LK}
–
–
12
μA V_IL = 0 V
V_DSL = 40V
T_j = 85 °C
Under Voltage Lockout HS-switch
5.4.8 Switch-ON voltage
5.4.9 Switch-OFF voltage
5.4.10 Switch ON/OFF hysteresis
Output stages
V_UVON
V_UVOFF
V_UVHY
–
–
1.8 –
–
1
5
V V_S increasing
4.5 V V_S decreasing
–
V
V_UVON – V_UVOFF
5.4.11 Inverse diode of high-side switch; V_FH
Forward-voltage
–
0.8 1.2 V I_FH = 5 A
5.4.12 Inverse diode of low-side switch;
V_FL
Forward-voltage
–
0.8 1.2 V I_FL = 5 A
5.4.13 Static drain-source on-resistance of R_{DS ON H} –
high-side switch
–
5.4.14 Static drain-source
on-resistance of low-side switch
R_{DS ON L}
–
–
26
–
mΩ I_SH = 5 A; V_S = 12 V
T_j = 25 °C
45
65
mΩ I_SH = 5 A; V_S = 12 V
T_j = 110°C²⁾
14
–
mΩ I_SL = 5 A; V_IL = 5 V
T_j = 25 °C
20
28
mΩ I_SL = 5 A; V_IL = 5 V
T_j = 110 °C²⁾
Data Sheet
12
Rev. 1.0, 2008-05-15