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BFP720FESD Datasheet, PDF (14/29 Pages) Infineon Technologies AG – Robust High Performance Low Noise Bipolar RF Transistor | |||
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BFP720FESD
Electrical Characteristics
Table 8 AC Characteristics, VCE = 3 V, f = 450 MHz
Parameter
Symbol
Min.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
Gms
â
Gms
â
Low noise operation point
High linearity operation point
Minimum noise figure
S21
â
S21
â
Minimum noise figure
Associated gain
Linearity
NFmin
â
Gass
â
1 dB gain compression point
3rd order intercept point
OP1dB
â
OIP3
â
Values
Typ. Max.
30
â
33.5 â
23
â
30
â
0.5
â
27.5 â
6
â
21.5 â
Unit Note / Test Condition
dB
dB
dB
dBm
IC = 5 mA
IC = 15 mA
ZS = ZL = 50 Ω
IC = 5 mA
IC = 15 mA
ZS = Zopt
IC = 5 mA
IC = 5 mA
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
Table 9 AC Characteristics, VCE = 3 V, f = 900 MHz
Parameter
Symbol
Min.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
Gms
â
Gms
â
Low noise operation point
High linearity operation point
Minimum noise figure
S21
â
S21
â
Minimum noise figure
Associated gain
Linearity
NFmin
â
Gass
â
1 dB gain compression point
3rd order intercept point
OP1dB
â
OIP3
â
Values
Typ. Max.
26.5 â
30.5 â
22.5 â
28.5 â
0.55 â
25.5 â
6.5
â
22
â
Unit Note / Test Condition
dB
dB
dB
dBm
IC = 5 mA
IC = 15 mA
ZS = ZL = 50 Ω
IC = 5 mA
IC = 15 mA
ZS = Zopt
IC = 5 mA
IC = 5 mA
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
Data Sheet
14
Revision 1.1, 2010-06-29
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