|
BFP720FESD Datasheet, PDF (12/29 Pages) Infineon Technologies AG – Robust High Performance Low Noise Bipolar RF Transistor | |||
|
◁ |
5
Electrical Characteristics
BFP720FESD
Electrical Characteristics
5.1
DC Characteristics
Table 5 DC Characteristics at TA = 25 °C
Parameter
Symbol
Collector emitter breakdown voltage V(BR)CEO
Min.
4.2
Collector emitter leakage current
ICES
â
Collector base leakage current
ICBO
â
Emitter base leakage current
IEBO
â
DC current gain
hFE
160
Values
Typ. Max.
4.7
â
â
400
â
400
â
10
250 400
Unit Note / Test Condition
V
IC = 1 mA, IB = 0
Open base
nA VCE = 2 V, VBE = 0
Emitter/base shortened
nA VCB = 2 V, IE = 0
Open emitter
μA VEB = 0.5 V, IC = 0
Open collector
VCE = 3 V, IC = 15 mA
Pulse measured
5.2
General AC Characteristics
Table 6 General AC Characteristics at TA = 25 °C
Parameter
Symbol
Min.
Transition frequency
fT
â
Collector base capacitance
CCB
â
Collector emitter capacitance
CCE
â
Emitter base capacitance
CEB
â
Values
Typ. Max.
45
â
0.05 â
0.35 â
0.4
â
Unit Note / Test Condition
GHz
pF
pF
pF
VCE = 3 V, IC = 15 mA
f = 1 GHz
VCB = 3 V, VBE = 0 V
f = 1 MHz
Emitter grounded
VCE = 3 V, VBE = 0 V
f = 1 MHz
Base grounded
VEB = 0.4 V, VCB = 0 V
f = 1 MHz
Collector grounded
Data Sheet
12
Revision 1.1, 2010-06-29
|
▷ |