SKB02N120_13 Datasheet, PDF (12/13 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

Figure A. Definition of switching times
SKB02N120
i,v
di /dt
F
I
F
I
rrm
t =t +t
rr S F
Q =Q +Q
rr
S
F
t
rr
t
t
S
F
QQ
S
F
10% I
t
rrm
di /dt V
rr
90% I
R
rrm
Figure C. Definition of diodes
switching characteristics
₁
r₁
T_j (t)
p(t)
r₁
₂
r₂
r₂
_n
r_n
r_n
T_C
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
12
Figure E. Dynamic test circuit
Leakage inductance L_ =180nH,
and stray capacity C_ =40pF.
Rev. 2.4 12.06.2013