SKB02N120_13 Datasheet, PDF (1/13 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode

SKB02N120
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled
Diode
Allowed number of short circuits: <1000; time between
short circuits: >1s.
 lower E_off compared to previous generation
 Short circuit withstand time – 10 s
 Designed for frequency inverters for washing machines,
fans, pumps and vacuum cleaners
 NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
 Pb-free lead plating; RoHS compliant
 Qualified according to JEDEC¹ for target applications
 Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-263-3-2
Type
SKB02N120
V_CE
I_C
E_off
T_j
Marking
Package
1200V 2A 0.11mJ 150C K02N120 PG-TO-263-3-2
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T_C = 25C
T_C = 100C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area
V_CE  1200V, T_j  150C
Diode forward current
T_C = 25C
T_C = 100C
Diode pulsed current, t_p limited by T_jmax
Gate-emitter voltage
Short circuit withstand time²
V_GE = 15V, 100VV_CC1200V, T_j  150C
Power dissipation
T_C = 25C
Operating junction and storage temperature
Soldering temperature, reflow soldering, MSL1
Symbol
V_CE
I_C
I_Cpuls
-
I_F
I_Fpuls
V_GE
t_SC
P_tot
T_j , T_stg
T_s
Value
Unit
1200
V
A
6.2
2.8
9.6
9.6
4.5
2
9
20
V
10
s
62
W
-55...+150
C
260
1 _{J-STD-020 and JESD-022}
2 _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
1
Rev. 2.4 12.06.2013