HYR166420G-845 Datasheet, PDF (12/14 Pages) Infineon Technologies AG – Direct RDRAM RIMM Modules (with 144 Mbit RDRAMs)

RIMM Module Current Profile
I_DD RIMM Module Capacity:
No. of 144 Mbit RDRAMs:
HYR 16xx20G/HYR 18xx20G
Rambus RIMM Modules
Unit
RIMM Modules Power
Conditions^a)
Freq. max.
max.
max.
I_DD1 One RDRAM in Read^b,
balance in NAP mode
-800 585
600
635
mA
-711 530
545
580
mA
-600 460
475
510
mA
I_DD2 One RDRAM in Read^b,
balance in Standby mode
-800 875
-711 805
1275
2075
mA
1185
1945
mA
-600 720
1080
1800
mA
I_DD3 One RDRAM in Read^b,
balance in Active mode
-800 1025
1625
2825
mA
-711 955
1535
2695
mA
-600 870
1430
2550
mA
I_DD4 One RDRAM in Write,
balance in Active mode
-800 645
660
695
mA
-711 580
595
630
mA
-600 505
520
555
mA
I_DD5 One RDRAM in Write,
balance in Standby mode
-800 935
-711 855
1335
2135
mA
1235
1995
mA
-600 765
1125
1845
mA
I_DD6 One RDRAM in Write,
balance in Active mode
-800 1085
1685
2885
mA
-711 1005
1585
2745
mA
-600 915
1475
2595
mA
a) Actual power will depend on individual memory controller and usage pattern. Power does not include Refresh
Current.
b) I/O power is a function of % 1’s to add I/O power for 50% 1’s for a x 16 need to add 257mA or 290mA for x18
ECC module for the following: V_DD = 2.5V, V_TERM = 1.8V, V_REF = 1.4V and V_DIL = V_REF = 0.5V.
INFINEON Technologies
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