TLE42994_14 Datasheet, PDF (11/36 Pages) Infineon Technologies AG – Extreme Low Current Consumption In ON State

4
General Product Characteristics
TLE42994
General Product Characteristics
4.1
Absolute Maximum Ratings
Table 1 Absolute Maximum Ratings¹⁾
-40 °C ≤ T_j ≤ 150°C; all voltages with respect to ground, positive current flowing into pin (unless otherwise
specified)
Parameter
Symbol
Values
Unit Note / Test Condition Number
Min. Typ. Max.
Input I, Enable Input EN, Sense Input SI
Voltage
V_I, V_EN, V_SI -40
–
45
V–
Output Q, Reset Output RO, Sense Output SO
P_4.1.1
Voltage
V_Q, V_RO, V_SO -0.3
–
7
Reset Delay D, Reset Threshold RADJ
V–
P_4.1.2
Voltage
Temperature
V_D, V_RADJ
-0.3
–
7
V–
P_4.1.3
Junction Temperature T_j
Storage Temperature
T_stg
ESD Absorption
-40
–
-50
–
150
°C –
150
°C –
P_4.1.4
P_4.1.5
ESD Absorption
V_ESD,HBM
-2
–
2
kV Human Body Model
(HBM)²⁾
P_4.1.6
ESD Absorption
V_ESD,CDM
-500 –
500
V Charge Device Model P_4.1.7
(CDM)³⁾
ESD Absorption
V_ESD,CDM
-750 –
750
V Charge Device Model P_4.1.8
(CDM)³⁾ at corner pins
1) not subject to production test, specified by design
2) ESD susceptibility Human Body Model “HBM” according to AEC-Q100-002 - JESD22-A114
3) ESD susceptibility Charged Device Model “CDM” according to ESDA STM5.3.1
Notes
1. Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
2. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous repetitive operation.
Data Sheet
11
Rev. 1.2, 2014-07-03