BTS5480SF Datasheet, PDF (11/59 Pages) Infineon Technologies AG – SPI Power Controller

SPOC - BTS5480SF
Electrical Characteristics
Absolute Maximum Ratings (cont’d)¹⁾
T_j = -40 to +150 °C; all voltages with respect to ground
(unless otherwise specified)
Pos. Parameter
Symbol Limit Values Unit Conditions
min. max.
4.1.20 Current through serial output pin SO
Limp Home Pin
I_SO
-2.0
2.0
mA t ≤ 2 min.
4.1.21 Voltage at limp home input pin
4.1.22 Current through limp home input pin
V_LHI
-0.3
5.5
V–
I_LHI
-0.75 0.75
mA –
-2.0
2.0
t ≤ 2 min.
External Driver Pins
4.1.23 Voltage at external driver output
V_EDO
-0.3
4.1.24 Current through external driver output
I_EDO
-1.0
4.1.25 Voltage at external driver diagnosis enable
V_EDD
-0.3
4.1.26 Current through external driver diagnosis enable I_EDD
-1.0
Temperatures
V_DD + 0.3 V
1.0
mA
V_DD + 0.3 V
1.0
mA
–
t ≤ 2 min.
–
t ≤ 2 min.
4.1.27 Junction temperature
T_j
-40
150
°C –
4.1.28 Dynamic temperature increase while switching ∆T_j
–
60
K–
4.1.29 Storage temperature
T_stg
-55
150
°C –
ESD Susceptibility
4.1.30 ESD susceptibility HBM
V_ESD
OUT pins vs. VBB
-4
4
kV HBM ⁷⁾
–
other pins incl. OUT vs. GND
-2
2
–
1) Not subject to production test, specified by design.
2) Device is mounted on an FR4 2s2p board according to Jedec JESD51-2,-5,-7 at natural convection; The product
(chip+package) was simulated on a 76.4 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70 µm Cu, 2 x 35 µm Cu).
Where applicable, a thermal via array under the package contacted the first inner copper layer.
3) In accordance to AEC Q100-012 and AEC Q101-006.
4) R_I is the internal resistance of the load dump pulse generator.
5) Over current protection is a protection feature. Operation in over current protection is considered as “outside” normal
operating range. Protection features are not designed for continuous repetitive operation.
6) Pulse shape represents inductive switch off: I_D(t) = I_D(0) × (1 - t / t_pulse); 0 < t < t_pulse
7) ESD resistivity, HBM according to EIA/JESD 22-A 114B (1.5 kΩ, 100 pF)
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
Data Sheet
11
Rev. 1.0, 2010-04-12