TLE5012BD Datasheet, PDF (10/17 Pages) Infineon Technologies AG – GMR-Based Dual Die Angle Sensor

4
Specification
TLE5012BD
Specification
4.1
Absolute Maximum Ratings
Table 4-1 Absolute maximum ratings
Parameter
Symbol
Ambient temperature
T_A
Junction temperature
T_J
Values
Unit Note / Test Condition
Min. Typ. Max.
-40
125 °C qualification acc. to AEC Q100
grade 1
-40
150 °C
150 °C For 1000 h, not additive
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the device.
Table 4-2 ESD protection
Parameter
Symbol
Values
Unit
Min.
Max.
ESD voltage
V_HBM
±4.0 kV
V_HBM
±2.0 kV
V_CDM
±0.5 kV
V_CDM
±0.75 kV
1) Human Body Model (HBM) according to ANSI/ESDA/JEDEC JS-001
2) Charged Device Model (CDM) according to JESD22-C101
Notes
1) _{ground pins connected}
1)
2)
2) _{for corner pins}
4.2
Calculation of the Junction Temperature
The total power dissipation P_TOT of the chips leads to self-heating, which increases the junction temperature T_J
above the ambient temperature.
The power multiplied by the total thermal resistance R_thJA (junction to ambient) yields the junction temperature.
R_thJA is the sum of the two components Junction to Case and Case to Ambient.
R_thJA = R_thJC + R_thCA
T_J = T_A + ΔT
∑ ^{ΔT = R}thJA ^{× P}TOT ^{= R}thJA ^{× (V}DD ^{× 2 I} DD ^{+ V}Q ^{× 2 I} Q ⁾
Q
(I_DD, I_Q > 0, if direction is into IC)
(4.1)
Data Sheet
10
Rev. 1.1, 2015-03-12