IKP15N60T_15 Datasheet, PDF (10/13 Pages) Infineon Technologies AG – IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

IKP15N60T
TRENCHSTOP™ Series
q
16A
T_J=175°C
14A
12A
10A
T_J=25°C
8A
6A
4A
2A
0A
400A/µs
600A/µs
800A/µs
di_F/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(V_R = 400V, I_F = 15A,
Dynamic test circuit in Figure E)
-700A/µs
-600A/µs
T_J=175°C
-500A/µs
-400A/µs
T_J=25°C
-300A/µs
-200A/µs
-100A/µs
0A/µs
400A/µs
600A/µs
800A/µs
di_F/dt, DIODE CURRENT SLOPE
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(V_R=400V, I_F=15A,
Dynamic test circuit in Figure E)
40A
30A
20A
10A
T_J=25°C
175°C
2.0V
1.5V
1.0V
0.5V
I =30A
F
15A
7.5A
0A
0V
1V
2V
V_F, FORWARD VOLTAGE
Figure 27. Typical diode forward current as
a function of forward voltage
0.0V
0°C
50°C
100°C
150°C
T_J, JUNCTION TEMPERATURE
Figure 28. Typical diode forward voltage as a
function of junction temperature
IFAG IPC TD VLS
10
Rev. 2.5 11.05.2015