IKP15N60T_15 Datasheet, PDF (1/13 Pages) Infineon Technologies AG – IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode

IKP15N60T
TRENCHSTOP™ Series
q
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Features:
 Very low VCE(sat) 1.5V (typ.)
 Maximum Junction Temperature 175°C
 Short circuit withstand time 5s
 Designed for :
- Frequency Converters
- Uninterrupted Power Supply
 TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
 Positive temperature coefficient in VCE(sat)
 Low EMI
 Pb-free lead plating; RoHS compliant
 Very soft, fast recovery anti-parallel Emitter Controlled HE diode
 Qualified according to JEDEC¹ for target applications
 Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO220-3
Type
IKP15N60T
V_CE
600V
I_C
15A
V_{CE(sat),Tj=25°C}
1.5V
T_j,max Marking Code
175C
K15T60
Package
PG-TO220-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj ≥ 25C
DC collector current, limited by Tjmax
TC = 25C, value limited by bondwire
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs
Diode forward current, limited by Tjmax
TC = 25C, value limited by bondwire
TC = 100C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time²⁾
VGE = 15V, VCC  400V, Tj  150C
Power dissipation TC = 25C
Operating junction temperature
Storage temperature
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
Value
Unit
600
V
26
23
45
A
45
26
23
45
20
V
5
s
130
W
-40...+175
-55...+150
C
260
1 _{J-STD-020 and JESD-022}
2) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
IFAG IPC TD VLS
1
Rev. 2.5 11.05.2015