BTS6143D Datasheet, PDF (10/16 Pages) Infineon Technologies AG – Smart Highside Power Switch

Data sheet BTS 6143 D
Reversave (Reverse battery protection)
-Vbb
R _bb
IN
R _IN
Logic
OUT
Power
Transistor
Vbb disconnect with energised inductive
load
Provide a current path with load current capability by
using a diode, a Z-diode, or a varistor. (V_ZL+V_D<39 V if
R_IN = 0). For higher clamp voltages currents at IN and
IS have to be limited to 120 mA.
Version a:
V _bb
V _bb
D
R _IS
Signal GND
R_L
Power GND
R_IS typ. 1 kΩ. Add R_IN for reverse battery protection in
applications with Vbb above 16V;
11
0.08 A
recommended value: _RIN + _RIS = _{| Vbb | −12V}
IN PROFET OUT
IS
V_D
V_ZL
To minimise power dissipation at reverse battery
operation, the overall current into the IN and IS pin
should be about 80mA. The current can be provided by
using a small signal diode D in parallel to the input
switch, by using a MOSFET input switch or by proper
adjusting the current through R_IS.
Since the current via R_bb generates additional heat in
the device, this has to be taken into account in the
overall thermal consideration.
Inverse load current operation
V_bb
+
Vbb
- I_L
IN PROFET OUT
-
V_IN
IS
I_IS
V_IS
R _IS
V_{OUT +}
-
The device can be operated in inverse load current
mode (V_OUT > V_bb > 0V). The current sense feature is
not available during this kind of operation (I_IS = 0). In
case of inverse operation the intrinsic drain source
diode is eventually conducting resulting in considerably
increased power dissipation.
The transition from inverse to forward mode can result
in a delayed switch on.
Note: Temperature protection during inverse load
current operation is not possible!
Infineon Technologies AG
10 of 16
2003-Oct-01