BTS6143D Datasheet, PDF (1/16 Pages) Infineon Technologies AG – Smart Highside Power Switch

PROFET® Data sheet BTS 6143 D
Smart Highside Power Switch
Reversave
• _{Reverse battery protection by self turn on of}
power MOSFET
Features
• _{Short circuit protection with latch}
• _{Current limitation}
• _{Overload protection}
• _{Thermal shutdown with restart}
• _{Overvoltage protection (including load dump)}
• _{Loss of ground protection}
• _{Loss of Vbb protection (with external diode for}
charged inductive loads)
• _{Very low standby current}
• _{Fast demagnetisation of inductive loads}
• _{Electrostatic discharge (ESD) protection}
• _{Optimized static electromagnetic compatibility}
(EMC)
Product Summary
Operating voltage
Vbb(on) 5.5 ... 38 V
On-state resistance
RON
10 mΩ
Nominal current
IL(nom)
8A
Load current (ISO)
IL(ISO)
33 A
Current limitation
I_L12(SC)
75 A
Package
TO-252-5-1
(DPAK 5 pin; less than half the size as TO 220 SMD)
Diagnostic Function
• _{Proportional load current sense (with defined fault signal in case of overload operation, overtemperature}
shutdown and/or short circuit shutdown)
Application
• _{Power switch with current sense diagnostic feedback for 12V and 24 V DC grounded loads}
• _{All types of resistive, inductive and capacitive loads}
• _{Replaces electromechanical relays, fuses and discrete circuits}
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS^ chip on chip technology. Providing embedded protective functions.
Voltage
source
Voltage
sensor
2 _IN
ESD
Logic
R _bb
Overvoltage Current
Gate
protection
limit
protection
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
3 & Tab
+ Vbb
OUT ^{1, 5}
I_L
Load
I _IN
Temperature
sensor
V_IN
V_IS
Logic GND
I _IS
IS
4
RIS
PROFET^
Load GND
Infineon Technologies AG
1 of 16
2003-Oct-01