PTVA123501EFC_15 Datasheet, PDF (1/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

PTVA123501EC
PTVA123501FC
Thermally-Enhanced High Power RF LDMOS FETs
350 W, 50 V, 1200 – 1400 MHz
Description
The PTVA123501EC and PTVA123501FC LDMOS FETs are designed
for use in power amplifier applications in the 1200 MHz to 1400 MHz
frequency band. Features include high gain and thermally-enhanced
package with slotted and earless flanges. Manufactured with Infineon's
advanced LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTVA123501EC
Package H-36248-2
PTVA123501FC
Package H-37248-2
Power Sweep, Pulsed RF
I_DQ = 150 mA, V_DD = 50 V, T_CASE = 25°C,
300 µs pulse width, 12% duty cycle
60
80
55
70
Output Power
50
60
45
50
40
35
30
30
Efficiency
32 34 36
40
1200 MHz
1300 MHz
30
1400 MHz
38
40
a123501ec_g1-1
20
42
P_IN (dBm)
Features
• Broadband internal input and output matching
• High gain and efficiency
• Integrated ESD protection
• Low thermal resistance
• Excellent ruggedness
• Pb-free and RoHS compliant
• Capable of withstanding a 10:1 load
mismatch (all phase angles) at 55.5 dBm
under pulsed conditions: 300 µs pulse width,
12% duty cycle, V_DD = 50 V
RF Characteristics
Pulsed RF Performance (tested in Infineon test fixture)
V_DD = 50 V, I_DQ = 0.15 A, P_OUT = 350 W, ƒ₁ = 1200 MHz, ƒ₂ = 1300 MHz, ƒ₃ = 1400 MHz, 300 µs pulse width, 12% duty cycle
Characteristic
Gain
Drain Efficiency
Return Loss
Symbol
Min
Typ
Max Unit
G_ps
16.5
17
—
dB
h_D
54
55
—
%
IRL
—
–12
–9
dB
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 14
Rev. 05, 2015-07-07