BFR750L3RH Datasheet, PDF (1/8 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor*
• High gain ultra low noise RF transistor
• Provides outstanding performance for a wide range
of wireless applications up to 10 GHz
• Ideal for WLAN and all 5-6 GHz applications
• High OIP₃ and P_-1dB for driver stages
• High maximum stable and available gain
G_ms = 21 dB at 1.8 GHz, G_ma = 11.5 dB at 6 GHz
• 150 GHz f_T-Silicon Germanium technology
• Extremly small and flat leadless package,
reduced height 0.32 mm max.
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
* Short term description
BFR750L3RH
3
1
2
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR750L3RH
Marking
Pin Configuration
R8
1=B
2=C
3=E
1_{Pb-containing package may be available upon special request}
Package
TSLP-3-9
1
2007-04-26