BFR740L3 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – NPN Silicon Germanium RF Transistor

BFR740L3
NPN Silicon Germanium RF Transistor
• High gain ultra low noise RF transistor
• Provides outstanding performance for
a wide range of wireless applications
up to 10 GHz and more
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.5 dB at 1.8 GHz
Outstanding noise figure F = 0.8 dB at 6 GHz
• High maximum stable gain
G_ms = 24 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 150 GHz f_T-Silicon Germanium technology
3
1
2
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR740L3
Marking
Pin Configuration
R7
1=B
2=C
3=E
Package
TSLP-3-8
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
T_A > 0°C
T_A ≤ 0°C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S ≤ 94°C
Junction temperature
Ambient temperature
Storage temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
1_{TS is measured on the collector lead at the soldering point to the pcb}
Value
Unit
V
4
3.5
13
13
1.2
30
mA
3
160
mW
150
°C
-65 ... 150
-65 ... 150
1
2005-10-17