BFR193L3_12 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – For low noise, high-gain amplifiers up to 2 GHz

NPN Bipolar RF Transistor
• For low noise, high-gain amplifiers up to 2 GHz
• For linear broadband amplifiers
• f_T = 8 GHz, NF_min = 1 dB at 900 MHz
• Pb-free (RoHS compliant) package
• Qualification report according to AEC-Q101 available
BFR193L3
3
1
2
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR193L3
Marking
Pin Configuration
RC
1=B
2=E
3=C
Package
TSLP-3-1
Maximum Ratings at T_A = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation¹⁾
T_S ≤ 89°C
Junction temperature
Storage temperature
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_J
T_Stg
12
V
20
20
2
80
mA
10
580
mW
150
°C
-55 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point²⁾
R_thJS
105
1_{TS is measured on the collector lead at the soldering point to the pcb}
2_{For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)}
Unit
K/W
1
2012-08-08