IDT70V26S Datasheet, PDF (7/17 Pages) Integrated Device Technology – HIGH-SPEED 3.3V 16K x 16 DUAL-PORT STATIC RAM

IDT70V26S/L
High-Speed 16K x 16 Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range^(4,5)
70V26X25
Com'l Only
70V26X35
Com'l Only
70V26X55
Com'l Only
Symbol
Parameter
Min. Max. Min. Max. Min. Max. Unit
READ CYCLE
tRC
Read Cycle Time
25
____
35
____
55
____
ns
tAA
Address Access Time
tACE
Chip Enable Access Time⁽³⁾
tABE
Byte Enable Access Time⁽³⁾
____
25
____
35
____
55
ns
____
25
____
35
____
55
ns
____
25
____
35
____
55
ns
tAOE
Output Enable Access Time
____
15
____
20
____
30
ns
tOH
Output Hold from Address Change
tLZ
Output Low-Z Time^(1,2)
tHZ
Output High-Z Time^(1,2)
tPU
Chip Enable to Power Up Time⁽²⁾
tPD
Chip Disable to Power Down Time⁽²⁾
tSOP
Semaphore Flag Update Pulse (OE or SEM)
3
____
3
____
3
____
ns
3
____
3
____
3
____
ns
____
15
____
20
____
25
ns
0
____
0
____
0
____
ns
____
25
____
35
____
50
ns
15
____
15
____
15
____
ns
tSAA
Semaphore Address Access Time
____
35
____
45
____
65
ns
NOTES:
1. Transition is measured 0mV from Low- or High-impedance voltage with Output Test Load (Figure 2).
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL.
4. 'X' in part number indicates power rating (S or L).
5. Industrial temperature: for specific speeds, packages and powers contact your sales office.
2945 tbl 11
Timing of Power-Up Power-Down
CE
tPU
ICC
50%
ISB
tPD
50%
2945 drw 06 ^,
6.742