ICS93718_07 Datasheet, PDF (6/9 Pages) Integrated Device Technology – DDR and SDRAM Buffer

ICS93718
DDR and SDRAM Buffer
Electrical Characteristics - Input/Supply/Common Output Parameters
SEL_DDR = 1 DDR/DDR_SDRAM Outputs V_DD=2.5, T_A = 0 - 85°C; (unless otherwise stated)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
Input High Current
Input Low Current
I_IH
V_I = V_DD or GND
I_IL
V_I ⁼ V_DD or GND
1
-100
-25
Operating Supply Current
I_DD2.5
C_L = 0pf, 133MHz
76
I_DDPD
C_L = 0pf, all
3
Output High Current
Output Low Current
I_OH
V_DD = 2.5V^, V_OUT = 1V
-74.5
I_OL
V_DD = 2.5V^, V_OUT =
26
42.5
V_DD = 2.5V,
High-level output voltage
V_OH
V_OH = -12mA
V_DD = 2.5V
Low-level output voltage
V_OL
I_OH = 12mA
Output differential-pair crossing
voltage
V_OC
Input Capacitance¹
C_IN
V_I = GND or V_DD
1_{Guaranteed by design, not 100% tested in production.}
1.7
2.3
0.35
(V_DD/2) –0.1
1.25
2
MAX
10
200
10
-18
0.46
(V_DD/2) +0.1
UNITS
µA
µA
mA
mA
mA
mA
V
V
pF
Recommended Operating Condition
SEL_DDR=1 DDR/DDR_SDRAM Outputs = 2.5V, T_A = 0 - 85°C (unless otherwise stated)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
Power Supply Voltage
Input High Voltage
Input Low Voltage
V_{DD3.3_2.5}
V_DD2.5
V_IH SEL_DDR, PD# input
V_IL SEL_DDR, PD# input
2.3
2.5
2.7
2.3
2.5
2.7
2.0
0.8
Input voltage level
V_IN
V_DD
1_{Guaranteed by design, not 100% tested in production.}
UNITS
V
V
V
V
IDT^TM/ICS^TM DDR and SDRAM Buffer
ICS93718 REV E 02/11/07