ICS93718_07 Datasheet, PDF (5/9 Pages) Integrated Device Technology – DDR and SDRAM Buffer

ICS93718
DDR and SDRAM Buffer
Absolute Max
Supply Voltage (VDD & VDD2.5)
Logic Inputs
Ambient Operating Temperature
Case Temperature
Storage Temperature
-0.5V to 3.6V
GND –0.5 V to VDD +0.5 V
0°C to +85°C
115°C
–65°C to +150°C
Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are
stress specifications only and functional operation of the device at these or any other conditions above those listed in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect product reliability.
Electrical Characteristics - Input/Supply/Common Output Parameters
SEL_DDR = 0 SDRAM Outputs V_DD = 3.3V, T_A = 0 - 85°C; (unless otherwise stated)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
Input High Current
I_IH
V_I = V_DD or GND
Input Low Current
I_IL
V_I ⁼ V_DD or GND
1
-100
-20
I_{DD3.3_2.5} C_L = 0pf, 133MHz
200
Operating Supply Current I_DD2.5
C_L = 0pf, 133MHz
100
I_DDPD
C_L = 0pf, all frequencies
3
Output High Current
I_OH
V_DD = 3.3V^, V_OUT = 1V
-74
Output Low Current
I_OL
V_DD = 3.3V^, V_OUT = 1.2V
26
42
High-level output voltage V_OH
V_DD = 3.3V,
V_OH = -12mA
2
2.95
V_DD = 3.3V
Low-level output voltage V_OL
I_OH= 12mA
Input Capacitance¹
C_IN
V_I ⁼ GND or V_DD
1_{Guaranteed by design, not 100% tested in production.}
0.35
2
MAX
10
250
200
10
-18
0.4
UNITS
µA
µA
mA
mA
mA
mA
mA
V
pF
Recommended Operating Condition
SEL_DDR=0 SDRAM Outputs VDD=3.3V, T_A = 0 - 85°C; (unless otherwise stated)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
Power Supply Voltage
Input High Voltage
V_{DD3.3_2.5}
V_DD2.5
V_IH SEL_DDR, PD# input
3.0
3.3
2.3
2.5
2.0
Input Low Voltage
V_IL SEL_DDR, PD# input
Input voltage level
V_IN
V_DD
1_{Guaranteed by design, not 100% tested in production.}
MAX
3.6
2.7
0.8
UNITS
V
V
V
V
IDT^TM/ICS^TM DDR and SDRAM Buffer
ICS93718 REV E 02/11/07