8V97051_16 Datasheet, PDF (40/56 Pages) Integrated Device Technology – Low Power Wideband Fractional RF Synthesizer / PLL

8V97051 Datasheet
Table 15B. RF_OUT_[A:B] Phase Noise and Jitter Characteristics, V_DDX = V_DDA = 3.3V ± 5%, T_A = -40°C to 85°C^{1 2}
Symbol
Parameter
Test Conditions
Minimum Typical Maximum Units
-
In-Band Phase Noise
3kHz from 2GHz Carrier
-107
dBc/Hz
_N(SYNTH) Normalized Phase Noise Floor
_N(1/f)
Normalized 1/f Noise³
10kHz Offset; Normalized to 1GHz
-231
-122.8
dBc/Hz
dBc/Hz
Harmonics f_{RF_OUT} = f_VCO/1 = 2.2GHz
2^nd / 3^rd
-40/ -38
dB
f_{RF_OUT} = f_VCO/2 = 1.1GHz
2^nd / 3^rd
-47/ -15
dB
f_{RF_OUT} = f_VCO/32 = 100MHz
2^nd / 3^rd
-64/ -10
dB
f_{RF_OUT} = f_VCO/64 = 34.375MHz
2^nd / 3^rd
-53/ -15
dB
NOTE 1. V_DDX denotes V_DDD, V_{_CP,} V_{DD_SD,} V_VCO.
NOTE 2. RF_OUT_[A:B] output power setting = +2dBm.
NOTE 3. _N(1/f) = _N(RF_OUT) – 10 Log(10kHz/f) – 10 Log (f_{RF_OUT}/1GHz) where _N(1/f) is the 1/f noise contribution at a RF_OUT 
frequency (f_{RF_OUT}) and at a frequency offset f.
©2016 Integrated Device Technology, Inc.
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Revision 4, September 22, 2016