ICS8536I-33 Datasheet, PDF (4/19 Pages) Integrated Device Technology – LOW SKEW, 1-TO-6, CRYSTAL OSCILLATOR/LVCMOSTO-3.3V, 2.5V LVPECL/LVCMOS FANOUT BUFFER

ICS8536I-33
LOW SKEW, 1-TO-6, CRYSTAL OSCILLATOR/LVCMOS-TO-3.3V, 2.5V LVPECL/LVCMOS FANOUT BUFFER
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V_CC
4.6V
Inputs, V_I (LVCMOS)
Outputs, V_O (LVCMOS)
Inputs, V (LVPECL)
I
Outputs, I_O (LVPECL)
Continuous Current
Surge Current
-0.5V to V_CC + 0.5 V
-0.5V to V + _{CCO_LVCMOS} 0.5V
-0.5V to V + 0.5V
CC
50mA
100mA
Package Thermal Impedance, θ_JA 91.1°C/W (0 mps)
Storage Temperature, T
STG
-65°C to 150°C
NOTE: Stresses beyond those listed under Absolute
Maximum Ratings may cause permanent damage to the
device. These ratings are stress specifications only. Functional op-
eration of product at these conditions or any conditions beyond
those listed in the DC Characteristics or AC Characteristics is not
implied. Exposure to absolute maximum rating conditions for ex-
tended periods may affect product reliability.
TABLE 4A. POWER SUPPLY DC CHARACTERISTICS, V_CC = V = _{CCO_LVPECL} V = _{CCO_LVCMOS} 3.3V±5%, V_EE = 0V, TA = -40°C TO 85°C
Symbol Parameter
Test Conditions
Minimum Typical Maximum Units
V_CC
V_{CCO_LVPECL,}
V_{CCO_LVCMOS}
I_EE
I_{CCO_LVPECL}
I_{CCO_LVCMOS}
Power Supply Voltage
Power Supply Voltage
Power Supply Current
Power Supply Current
Power Supply Current
3.135
3.3
3.465
V
3.135
3.3
3.465
V
80
mA
25
mA
45
mA
TABLE 4B. POWER SUPPLY DC CHARACTERISTICS, V_CC = V = _{CCO_LVPECL} V = _{CCO_LVCMOS} 2.5V±5%, V_EE = 0V, TA = -40°C TO 85°C
Symbol Parameter
Test Conditions
Minimum Typical Maximum Units
V_CC
V_{CCO_LVPECL,}
V
CCO_LVCMOS
I_EE
I_{CCO_LVPECL}
I_{CCO_LVCMOS}
Power Supply Voltage
Power Supply Voltage
Power Supply Current
Power Supply Current
Power Supply Current
2.375
2.5
2.625
V
2.375
2.5
2.625
V
80
mA
30
mA
45
mA
IDT^™ / ICS^™ 3.3V, 2.5V LVPECL/ LVCMOS FANOUT BUFFER
4
ICS8536CGI-33 REV. B OCTOBER 27, 2008