71024S15YI Datasheet, PDF (4/8 Pages) Integrated Device Technology – CMOS Static RAM 1 Meg (128K x 8-Bit)

IDT71024 CMOS Static RAM
1 Meg (128K x 8-Bit)
Commercial and Industrial Temperature Ranges
AC Electrical Characteristics
(VCC = 5.0V ± 10%, Commercial and Industrial Temperature Ranges)
71024S12
71024S15
71024S20
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
Read Cycle
tRC
Read Cycle Time
12
—
15
—
20
—
ns
tAA
Address Access Time
—
12
—
15
—
20
ns
tACS
tCLZ⁽¹⁾
tCHZ⁽¹⁾
Chip Select Access Time
Chip Sele ct to Output in Low-Z
Chip Desele ct to Output in High-Z
—
12
—
15
—
20
ns
3
—
3
—
3
—
ns
0
6
0
7
0
8
ns
tOE
tOLZ⁽¹⁾
tOHZ⁽¹⁾
Output Enable to Output Valid
Output Enab le to Output in Low-Z
Output Disab le to Output in High-Z
—
6
—
7
—
8
ns
0
—
0
—
0
—
ns
0
5
0
5
0
7
ns
tOH
Output Hold from Address Change
tPU⁽¹⁾
Chip Select to Power-Up Time
tPD⁽¹⁾
Chip Deselect to Power-Down Time
4
—
4
—
4
—
ns
0
—
0
—
0
—
ns
—
12
—
15
—
20
ns
Write Cycle
tWC
Write Cycle Time
12
—
15
—
20
—
ns
tAW
Address Valid to End-of-Write
10
—
12
—
15
—
ns
tCW
Chip Select to End-of-Write
10
—
12
—
15
—
ns
tAS
Address Set-Up Time
0
—
0
—
0
—
ns
tWP
Write Pulse Width
8
—
12
—
15
—
ns
tWR
Write Recovery Time
0
—
0
—
0
—
ns
tDW
Data Valid to End-of-Write
7
—
8
—
9
—
ns
tDH
tOW⁽¹⁾
tWHZ⁽¹⁾
Data Hold Time
Output Active from End-of-Write
Write Enab le to Output in High-Z
0
—
0
—
0
—
ns
3
—
3
—
4
—
ns
0
5
0
5
0
8
ns
NOTE:
1. This parameter guaranteed with the AC load (Figure 2) by device characterization, but is not production tested.
2964 tbl 09
6.442