TSE2004GB2C0 Datasheet, PDF (30/38 Pages) Integrated Device Technology – DDR4 Temperature Sensor with Integrated 4Kbit EEPROM for Memory Module

TSE2004GB2C0 Datasheet
DC Characteristics
Table 25. DC Characteristics
f <400kHz
f >400kHz
Symbol
Parameter
Conditions
I_LI Input
SCL, SDA V_IN = V_SSSPD or V_DDSPD
Leakage Current
I_LO Output Leakage Current
I_DD Supply Current
V_OUT = V_SSSPD or
V_DDSPD, SDA in Hi-Z
V_DDSPD = 3.3V, f_C =
100kHz (rise/fall time
Minimum
—
—
—
Maximum
±5
±5
2
Minimum
—
—
—
Maximum Units
±5
µA
±5
µA
2
mA
V_IN = V_SSSPD or
—
100
—
100
µA
I_DD1 Standby Supply Current
V_DDSPD, V_DDSPD = 3.6V
V_IN = V_SSSPD or
—
100
—
100
µA
V_DDSPD, V_DDSPD = 2.2V
V_IL Input
Low Voltage
SCL, SDA —
-0.5
0.3 ×
-0.5
0.3 ×
V
V_DDSPD
V_DDSPD
V_IH Input
High Voltage
SCL, SDA —
0.7V ×
V_DDSPD
0.7V ×
V_DDSPD
V
V_DDSPD
+0.5
V_DDSPD
+0.5V
V_HV SA0 High Voltage
VHV – V_DDSPD >4.8V
7
10
7
10
V
V_OL1 Output Low Voltage
3mA sink current,
Open-drain or Open-collector ^VDDSPD ^>2V
—
0.4
—
0.4
V
I_OL
LOW-level Output Current^[a]
V_OL = 0.4V
V_OL = 0.6V
3
6
20
mA
—
—
mA
V_HYST Input Hysteresis
V_DDSPD >2V
0.05V ×
—
0.0 ×
—
V
V_DDSPD
V_DDSPD
V_PON Power-on Reset Threshold
Monotonic rise between
1.6
—
1.6
—
V
V_PON and V_DDSPD
V_POFF Power Off Threshold for
warm power-on cycle
No ring-back above
V_POFF
—
0.9
—
0.9
V
[a] In order to drive a full bus load at 400kHz, 6mA I_OL is required at 0.6V V_OL. Parts not meeting this specification can still function, but not at 400kHz and
400pF.
©2017 Integrated Device Technology, Inc.
30
May 15, 2017