ICS843S1066 Datasheet, PDF (3/12 Pages) Integrated Device Technology – CRYSTAL-TO-3.3V LVPECL CLOCK SYNTHESIZER

ICS843S1066
CRYSTAL-TO-3.3V LVPECL CLOCK SYNTHESIZER
Table 4B. LVCMOS/LVTTL DC Characteristics, V_CC = 3.3V ± 5%, V_EE = 0V, T_A = 0°C to 70°C
Symbol Parameter
Test Conditions
Minimum Typical
V_IH
Input High Voltage
2
V_IL
Input Low Voltage
-0.3
I_IH
Input High Current
V_CC = V_IN = 3.465V
I_IL
Input Low Current
V_CC = 3.465V, V_IN = 0V
-10
Maximum
V_CC + 0.3
0.8
150
Units
V
V
µA
µA
Table 4C. LVPECL DC Characteristics, V_CC = 3.3V ± 5%, V_EE = 0V, T_A = 0°C to 70°C
Symbol Parameter
Test Conditions
Minimum
V_OH
V_OL
V_SWING
Output High Current; NOTE 1
Output Low Current; NOTE 1
Peak-to-Peak Output Voltage Swing
V_CC – 1.3
V_CC – 2.0
0.6
NOTE 1: Outputs terminated with 50Ω to V_CC – 2V.
Typical
Maximum
V_CC – 0.8
V_CC – 1.6
1.0
Units
V
V
V
Table 5. Crystal Characteristics
Parameter
Mode of Oscillation
Frequency
Equivalent Series Resistance (ESR)
Shunt Capacitance
Test Conditions
Minimum Typical Maximum
Fundamental
20
50
7
Units
MHz
Ω
pF
AC Electrical Characteristics
Table 6. AC Characteristics, V_CC = 3.3V ± 5%, V_EE = 0V, T_A = 0°C to 70°C
Parameter Symbol
Test Conditions
f_OUT
Output Frequency
F_SEL = 0
F_SEL = 1
tjit(cc)
Cycle-to-Cycle Jitter; NOTE 1
tjit(per)
Period Jitter; NOTE 1
t_R / t_F
odc
Output Rise/Fall Time
Output Duty Cycle
20% to 80%
NOTE 1: This parameter is defined in accordance with JEDEC Standard 65.
Minimum
100
48
Typical
1066.67
1600
Maximum
25
1.9
200
52
Units
MHz
MHz
ps
ps
ps
%
IDT™ / ICS™ 3.3V LVPECL CLOCK SYNTHESIZER
3
ICS843S1066CG REV. A AUGUST 27, 2008