IC41C4400x Datasheet, PDF (8/20 Pages) Integrated Circuit Solution Inc – 4Mx4 bit Dynamic RAM with EDO Page Mode

IC41C4400x and IC41LV4400x Series
AC CHARACTERISTICS (Continued)^{(1,2,3,4,5,6)}
(Recommended Operating Conditions unless otherwise noted.)
Symbol
tACH
tOEH
tDS
tDH
tRWC
tRWD
tCWD
tAWD
tPC
tRASP
tCPA
tPRWC
tCOH
tOFF
tWHZ
tCSR
tCHR
tORD
tREF
tT
Parameter
Column-Address Setup Time to CAS
Precharge during WRITE Cycle
OE Hold Time from WE during
READ-MODIFY-WRITE cycle⁽¹⁸⁾
Data-In Setup Time^{(15, 22)}
Data-In Hold Time^{(15, 22)}
READ-MODIFY-WRITE Cycle Time
RAS to WE Delay Time during
READ-MODIFY-WRITE Cycle⁽¹⁴⁾
CAS to WE Delay Time^{(14, 20)}
Column-Address to WE Delay Time⁽¹⁴⁾
EDO Page Mode READ or WRITE
Cycle Time
RAS Pulse Width in EDO Page Mode
Access Time from CAS Precharge⁽¹⁵⁾
EDO Page Mode READ-WRITE
Cycle Time
Data Output Hold after CAS LOW
Output Buffer Turn-Off Delay from
CAS or RAS^{(13,15,19, 24)}
Output Disable Delay from WE
CAS Setup Time (CBR REFRESH)^{(20, 25)}
CAS Hold Time (CBR REFRESH)^{( 21, 25)}
OE Setup Time prior to RAS during
HIDDEN REFRESH Cycle
Auto Refresh Period
2,048 Cycles
4,096 Cycles
Transition Time (Rise or Fall)^{(2, 3)}
-50
Min. Max.
15
−
8
−
0
−
8
−
108 −
64
−
26
−
39
−
20
−
50 100K
−
30
56
−
5
−
0
12
3
10
5
−
8
−
0
−
−
32
−
64
1
50
AC TEST CONDITIONS
Output load:
Two TTL Loads and 50 pF
Input timing reference levels: VIH = 2.4V, VIL = 0.8V
Output timing reference levels: VOH = 2.0V, VOL = 0.8V
-60
Min. Max.
15
−
10
−
0
−
10
−
133 −
77
−
32
−
47
−
25
−
60 100K
−
35
68
−
5
−
0
15
3
10
5
−
10
−
0
−
−
32
−
64
1
50
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ns
8
Integrated Circuit Solution Inc.
DR007-0B 10/17/2002