IC41C4100 Datasheet, PDF (6/21 Pages) Integrated Circuit Solution Inc – 1Mx4 bit Dynamic RAM with EDO Page Mode

IC41C4100
IC41LV4100
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol Parameters
Rating Unit
VT
Voltage on Any Pin Relative to GND
5V –1.0 to +7.0 V
3.3V –0.5 to +4.6
VCC
Supply Voltage
5V
3.3V
–1.0 to +7.0 V
–0.5 to +4.6
IOUT
Output Current
50
mA
PD
Power Dissipation
1
W
TA
Commercial Operation Temperature
Industrial Operationg Temperature
0 to +70 °C
–40 to +85 °C
TSTG
Storage Temperature
–55 to +125 °C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)
Symbol
VCC
VIH
VIL
TA
Parameter
Supply Voltage
Input High Voltage
Input Low Voltage
Commercial Ambient Temperature
Industrial Ambient Temperature
5V
3.3V
5V
3.3V
5V
3.3V
Min. Typ.
Max.
Unit
4.5 5.0
5.5
V
3.0 3.3
3.6
2.4 — VCC + 1.0 V
2.0
— VCC + 0.3
–1.0 —
0.8
V
–0.3 —
0.8
0
—
70
°C
–40 —
85
°C
CAPACITANCE^(1,2)
Symbol
CIN1
CIN2
CIO
Parameter
Input Capacitance: A0-A9
Input Capacitance: RAS, CAS, WE, OE
Data Input/Output Capacitance: I/O0-I/O3
Max.
Unit
5
pF
7
pF
7
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz.
6
Integrated Circuit Solution Inc.
DR027-0A 09/05/2001