IS61LV6424-10 Datasheet, PDF (5/10 Pages) Integrated Circuit Solution Inc – 64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

IS61LV6424
READ CYCLE SWITCHING CHARACTERISTICS⁽¹⁾ (Over Operating Range)
Symbol Parameter
-9
-10
-12
-15
Min. Max. Min. Max. Min. Max. Min. Max. Unit
1
tRC Read Cycle Time
9—
10 —
12 —
15 —
ns
tAA Address Access Time
—9
— 10
— 12
— 15
ns
tAV V/S Access Time
—9
— 10
— 12
— 15
ns
2
tOH Output Hold Time
3—
3—
3
—
3—
ns
From MUX Change
tOHA Output Hold Time
3—
3—
3
—
3—
ns
3
From Address Change
tACE CE1Access Time
—9
— 10
— 12
— 15
ns
tACE2 CE2 Access Time
tDOE OE Access Time
—5
—5
—
6
—7
ns
4
tHZOE⁽²⁾ OE to High-Z Output
03
03
0
3
03
ns
tLZOE⁽²⁾ OE to Low-Z Output
tHZCE⁽²⁾ CE1 to High-Z Output
0—
05
0—
05
0
—
0
6
0—
ns
07
ns
5
tHZCE2⁽²⁾ CE2 to High-Z Output
tLZCE⁽²⁾ CE to Low-Z Output
tLZCE2⁽²⁾ CE2 to Low-Z Output
3—
3—
3
—
3—
ns
6
Notes:
1. Test conditions assume signal transition times of 2 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±200 mV from steady-state voltage. Not 100% tested.
7
8
9
10
11
12
Integrated Circuit Solution Inc.
AHSR012-0D
S2-99