IS61LV6424-10 Datasheet, PDF (1/10 Pages) Integrated Circuit Solution Inc – 64K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

IS61LV6424
64K x 24 HIGH-SPEED CMOS STATIC RAM
WITH 3.3V SUPPLY
FEATURES
• High-speed access time: 9, 10, 12, 15 ns
• CMOS low power operation
— 594 mW (max.) operating @ 9 ns
— 36 mW (max.) CMOS standby
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Available in 100-pin LQFP
DESCRIPTION
The ICSI IS61LV6424 is a high-speed, static RAM organized
as 65,536 words by 24 bits. It is fabricated using ICSI's high-
performance CMOS technology. This highly reliable process
coupled with innovative circuit design techniques, yields ac-
cess times as fast as 9 ns with low power consumption.
When CE1 is HIGH and CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation can
be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs, CE1, CE2, and OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory.
The IS61LV6424 is packaged in the JEDEC standard
100-pin 14*20*1.4mm LQFP.
FUNCTIONAL BLOCK DIAGRAM
VCC
GND
A0-A14
ROW
DECODER
64K x 24
MEMORY ARRAY
A15
MULTIPLEX
X/Y
ADDRESS
V/S
CONTROL
CE1
CE2
CONTROL
OE
CIRCUIT
WE
COLUMN
DECODER
I/O DATA
CIRCUIT
I/O0-I/O23
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
Integrated Circuit Solution Inc.
AHSR012-0D
S2-95