IS62LV1024L Datasheet, PDF (3/10 Pages) Integrated Circuit Solution Inc – 128K x 8 LOW POWER AND LOW Vcc

IS62LV1024L/LL
TRUTH TABLE
Mode
WE
Not Selected X
(Power-down) X
Output Disabled H
Read
H
Write
L
CE1
H
X
L
L
L
CE2 OE
XX
LX
HH
HL
HX
I/O Operation
High-Z
High-Z
High-Z
DOUT
DIN
Vcc Current
ISB, ISB
ISB, ISB
ICC
ICC
ICC
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol
VTERM
VCC
TBIAS
TSTG
PT
Parameter
Terminal Voltage with Respect to GND
Vcc related to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
Value
Unit
–0.5 to Vcc + 0.5 V
–0.3 to +4.6
V
–40 to +85
°C
–65 to +150
°C
0.7
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
CAPACITANCE^(1,2)
Symbol
CIN
COUT
Parameter
Input Capacitance
Output Capacitance
Conditions
VIN = 0V
VOUT = 0V
Max.
Unit
6
p.
8
p.
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.0V.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
VOH
Output HIGH Voltage VCC = Min., IOH = –1.0 mA
VOL
Output LOW Voltage
VCC = Min., IOL = 2.1 mA
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
ILI
Input Leakage
GND ≤ VIN ≤ VCC
ILO
Output Leakage
GND ≤ VOUT ≤ VCC
Notes:
1. VIL = –3.0V for pulse width less than 10 ns.
Min.
Max.
Unit
2.2
—
V
—
0.4
V
2.2 VCC + 0.3
V
–0.3
0.4
V
–1
1
µA
–1
1
µA
Integrated Circuit Solution Inc.
3
LPSR018-0D 07/06/2001