IS62LV1024L Datasheet, PDF (1/10 Pages) Integrated Circuit Solution Inc – 128K x 8 LOW POWER AND LOW Vcc

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128K x 8 LOW POWER and LOW Vcc
CMOS STATIC RAM
.EATURES
• Access times of 45, 55, and 70 ns
• Low active power: 60 mW (typical)
• Low standby power: 15 µW (typical) CMOS
standby
• Low data retention voltage: 2V (min.)
• Available in Low Power (-L) and
Ultra Low Power (-LL)
• Output Enable (OE) and two Chip Enable
(CE1 and CE2) inputs for ease in applications
• TTL compatible inputs and outputs
• Single 2.7V to 3.6V power supply
DESCRIPTION
The 1+51 IS62LV1024L and IS62LV1024LL are low power
and low Vcc,131,072-word by 8-bit CMOS static RAMs. They
are fabricated using 1+51's high-performance CMOS technol-
ogy. This highly reliable process coupled with innovative circuit
design techniques, yields higher performance and low power
consumption devices.
When CE1 is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation can
be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip Enable
inputs, CE1 and CE2. The active LOW Write Enable (WE)
controls both writing and reading of the memory.
The IS62LV1024L and IS62LV1024LL are available in 32-pin
8*20mm TSOP-1, 8*13.4mm TSOP-1, 450mil SOP and 48-pin
6*8mm T.-BGA.
.UNCTIONAL BLOCK DIAGRAM
A0-A16
VCC
GND
I/O0-I/O7
DECODER
512 X 2048
MEMORY ARRAY
I/O
DATA
CIRCUIT
COLUMN I/O
CE1
CE2
CONTROL
OE
CIRCUIT
WE
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
Integrated Circuit Solution Inc.
1
LPSR018-0D 07/06/2001